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Fujitsu introduces two new enhanced Mobile FCRAM Burst Mode devices

Fujitsu introduces two new enhanced Mobile FCRAM Burst Mode devices










(PRWEB) May 15, 2003

Fujitsu Limited and Fujitsu Microelectronics Europe GmbH (FME) have announced two new Mobile FCRAM devices based on the company’s Fast Cycle RAM (FCRAM) architecture. The new Mobile FCRAMs, “MB82DBS02163C” and “MB82DBS04163B”, are the first to adopt Burst Mode for both the Read and Write operations, with compliance to “Common Specification for Mobile RAM (COSMORAM)”, as recently announced by Fujitsu Limited, NEC Electronics Corporation and Toshiba Corporation.

The new devices, designed for use in 3rd generation mobile phones, offer such facilities as built-in digital camera, video data streaming and other multimedia services to satisfy the growing memory requirements of advanced infrastructure and high data rates demanded by mobile cellular technologies.

They adopt Burst Mode operation, compatible to Burst Read operation of Flash memory of which consecutive Read operations are synchronised to system clock. In addition to Burst Read operation, FCRAMs realise Burst Write operation. The Burst Mode of FCRAMs provides enhanced performance compared with Page Mode devices. The devices are initially operational in Page Mode after power on and are user configurable to Burst Mode. Therefore, these devices retain functionality inherent in today’s design infrastructure. Over and above the improvement on Read and Write access, power consumption is also improved. User configurable Partial Power Down Mode is available, which allows users to optimise design for longer battery life.

These new devices will be available in monolithic and multi-chip packages together with Fujitsu Flash memory, or in wafer form for embedded

applications. Future versions will expand Burst frequency up to 100MHz as well as densities up to 128Mbit. This announcement underlines Fujitsu’s commitment to the continued development and production of high value-added Application-Specific Memory products, in response to customer requirements.

Part Number             MB82DBS02163C        MB82DBS04163B

Density             32M bit            64M bit

I/O Configuration         x16                x16

Supply Voltage         1.65V to 1.95V        1.65V to 1.95V

Burst Frequency         66MHz (@RL=5)        66MHz (@RL=5)

Initial Access Time         70ns                70ns

Clock Access Time         12ns                12ns

Page Access Time         20ns                20ns

VDD Active Current         30mA                30mA

VDD Standby Current     80µA                120µA

VDD Power Down Current     10µA                10µA

 FCRAM is a trademark of Fujitsu Limited in Japan.

…ends (Ref: 014053-08/PR783)

ISSUED ON BEHALF OF:                

Fujitsu Microelectronics Europe            

Tel: +49-6103-690-0         

E-mail: jim.bryant@fme.fujitsu.com        

Contact: Jim Bryant                

MORE INFORMATION FROM:

JDK Marketing Communications

Tel: 01959 562772

E-mail: claire@jdk.co.uk

Contact: Joanna Muggeridge



















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